0:00
hello everyone welcome to my YouTube
0:03
channel called silicon vsi today we will
0:05
discuss about how to solve antenna
0:07
effect in vsi so before moving to that I
0:11
just want to explain what is the antenna
0:13
effect in vsi so let's start the antenna
0:16
effect also known as the plasma induced
0:19
damage occur during the manufactur
0:21
process of vsi it's happen when long
0:23
metal interconnect act like antenna
0:26
collecting charge during the plasma
0:28
itching which can is the Gate oide of
0:31
the transistor so here I just want to
0:34
give you brief explanation about what is
0:36
the antenna or what is the antenna ratio
0:39
you should draw antenna
0:51
area so this ratio should not be greater
0:55
than some some number this number it
0:57
depend on the technology it will be vary
1:00
with according to technology so we just
1:03
want to understand this thing how this
1:07
ratio is effect to transistor so first
1:11
thing to avoid the antenna effect my our
1:14
first movement will be you know we need
1:17
to place device as close as possible our
1:20
main aim is to reduce the metal area so
1:23
let's assume this gate and this gate has
1:30
put this two device as close as possible
1:33
so that we can reduce the metal area so
1:37
this is the first step to avoid the
1:41
effect you should place as close as
1:46
devices which is connected to each other
1:50
so this is the first step second step is
1:53
use metal jumper so if device is not
1:57
possible to place near to each other
1:59
second step is use metal
2:04
jumper so let's assume we are getting
2:07
antenna error in Metal 2 so we should
2:11
always go for a higher metal so let's
2:23
2 so we should jump for metal 3 not
2:27
metal 1 if you know already why metal
2:30
not it is okay if you don't know just do
2:33
comment I will give you reply in the
2:35
comment so so do you think friend this
2:39
metal three like the cut which I did
2:42
here in this region it is
2:45
okay no this is not okay we should cut
2:49
the metal to near to the let's
2:54
assume from here like I I cannot say
2:57
this is the gate it it could be a drain
3:00
two gate is not like here should not
3:02
connect like this is the drain and the
3:05
drain signal is going to gate so so
3:09
better practice is we should always cut
3:12
M2 or wherever we are getting the
3:15
antenna we should cut near to the gate
3:18
only we should reduce this area as much
3:21
as possible we should not cut here we
3:26
here like this way so this is M3 M2 M2
3:32
so this is the best practice so
3:35
interviewer may be ask you which how you
3:38
will choose cut like from where you will
3:41
jump which location that is very
3:43
important here you should
3:45
always tell them like I should cut it
3:50
from here not from in this location but
3:53
Jumper near to the gate in conclusion we
3:57
should always take care we should cut
4:00
the metal wherever we are getting
4:02
antenna we should cut near to the gate
4:05
area gate region only so this is right
4:10
this is wrong so second thing is this
4:13
metal jumper we should use metal jumper
4:15
if metal jumper is not possible the
4:18
design is fully congested we cannot
4:21
place the device near to each other
4:23
third step will be an and iode this is
4:26
the very important thing to Sol the
4:30
antenna error let's assume this is the
4:42
drain so if we are not going like we
4:45
cannot jump towards the top side and we
4:48
cannot place near to each other we
4:50
should put antenna diode in this
4:52
location and that diode should always a
4:54
reverse bias that is very important
4:57
thing we should put that diode near to
5:01
the device only where where gate is
5:03
present we should not put here the diode
5:06
this is wrong location we should always
5:09
put antenna diode near to the gate where
5:12
we are getting the antenna if
5:15
error now second one another thing very
5:19
important thing is how this diode will
5:23
work do you know friends how this diode
5:25
will work so during this diode will
5:30
only during the fabrication
5:35
process very high so this diode will
5:38
work as a resistor so whatever current
5:41
will be there it will choose this path
5:43
and it will discharge in normal
5:46
condition like in circuit condition this
5:49
diode will always work as a reverse B
5:51
because of a lower temperature so this
5:53
is a very important thing here one
5:55
question will rise how this diode will
5:58
work so you have to tell like during the
6:01
fabrication process this diode because
6:04
of the high temperature this diode will
6:05
work as a resistor so this is very
6:09
thing now so we have now the
6:14
last method is use the dummy fill you
6:17
can also use dummy fill to balance the
6:19
charge distribution and minimize the
6:21
charge accumulation on the specific
6:25
now I will tell you one question so you
6:28
should give me the answer
6:30
so if you don't know just if you know
6:34
you just do comment or don't know you
6:36
also do comment I will let you know the
6:38
answer this is very important question
6:42
so interviewer asks you I'm getting
6:46
error in this antenna error in y
6:56
crosssection so this is y 7
7:06
so obviously if this is y 7 then this
7:10
will be metal 7 and on the top of metal
7:14
8 will be also there this is Metal
7:17
8 so interor are saying like I'm getting
7:26
7 how like they will ask you
7:30
why not in M7 and M8 why I'm getting
7:33
only antenna error in Ys
7:36
7 because if you think like if you see
7:44
Formula metal area upon gate area or Y
7:51
area so but if you see here the Y area
7:54
is very less as compared to metal 7 or
7:58
8 because always Y is under either metal
8:01
7 or metal 8 then why I am getting
8:05
interna area in y 7 only why not M8 or
8:11
M7 so if you know the answer please let
8:15
know this is very interesting question
8:18
so nowadays people are asking this
8:24
company so that's all my friend if you
8:27
have any question just let us know thank