20+ Top Transferred-Electron MCQs with Answers
Transferred-Electron Devices (TED) are based on the principle of:
a) Zener breakdown
b) Avalanche breakdown
c) Negative resistance
Hint: TED operates on the principle of negative resistance.
The typical material used to fabricate Transferred-Electron Devices is:
c) Gallium arsenide
Hint: TEDs are commonly made of gallium arsenide.
Transferred-Electron Devices are often referred to as:
a) Varactor diodes
b) IMPATT diodes
c) Gunn diodes
Hint: TEDs are also known as Gunn diodes.
The main application of Transferred-Electron Devices is in:
a) Microwave oscillators
Hint: TEDs are widely used in microwave oscillators.
The operation of a Transferred-Electron Device is based on the __________ effect.
Hint: TED operates on the transit-time effect.
The I-V characteristic of a Transferred-Electron Device shows:
a) Positive resistance
b) Negative resistance
c) Linear behavior
Hint: TED exhibits negative resistance in its I-V characteristic.
The transit time in a Transferred-Electron Device is the time taken by electrons to:
a) Tunnel through the depletion region
b) Move through the avalanche region
c) Travel from one end to the other
Hint: Transit time is the time taken for electrons to traverse the device.
TEDs are commonly used in _________ circuits for high-frequency applications.
Hint: TEDs are used in non-linear circuits for high-frequency applications.
The efficiency of a Transferred-Electron Device is generally:
Hint: TEDs have lower efficiency compared to other devices.
In a Transferred-Electron Device, the negative resistance region occurs when the electric field:
a) Increases rapidly
b) Decreases rapidly
c) Remains constant
Hint: The negative resistance region occurs with a rapid increase in the electric field.
The negative differential mobility is a characteristic feature of:
a) Varactor diodes
b) Tunnel diodes
c) Transferred-Electron Devices
Hint: TEDs exhibit negative differential mobility.
The Gunn effect, observed in TEDs, leads to:
a) Negative resistance
b) Positive resistance
c) Infinite resistance
Hint: The Gunn effect causes negative resistance.
TEDs can be used in ________ circuits for high-power applications.
Hint: TEDs are suitable for high-power non-linear circuits.
The oscillation frequency of a TED is primarily determined by:
a) Doping concentration
b) Applied voltage
c) Device length
Hint: The oscillation frequency depends on the device’s length.
The negative resistance characteristic in a Transferred-Electron Device results in:
a) Exponential decrease in current
b) Exponential increase in current
c) Linear increase in current
Hint: Negative resistance causes an exponential increase in current.
TEDs are used as the active element in:
a) Microwave mixers
b) Microwave antennas
c) Microwave amplifiers
Hint: TEDs are used as the active element in microwave amplifiers.
The typical operating frequency range of Transferred-Electron Devices is in the:
a) GHz range
b) MHz range
c) kHz range
Hint: TEDs typically operate in the gigahertz (GHz) frequency range.
The Gunn effect in Transferred-Electron Devices leads to:
a) Decreased electron velocity
b) Negative mobility of carriers
c) Increased electron velocity
Hint: The Gunn effect causes an increase in electron velocity.
The primary advantage of Transferred-Electron Devices is their:
a) Low cost
b) High efficiency
c) High power capability
Hint: TEDs can handle high power levels.
The doping concentration in a Transferred-Electron Device affects its:
a) Barrier potential
b) Breakdown voltage
c) Negative resistance region
Hint: Doping concentration influences the extent of the negative resistance region in TEDs
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