“Halo doping, also referred to as halo implantation, is a semiconductor manufacturing technique used to modify the doping concentration in specific regions of a transistor.”
It involves selectively implanting dopant atoms into the silicon substrate surrounding the transistor’s active region.
The purpose of halo doping is to improve the device’s performance by controlling the distribution of charge carriers, such as electrons or holes, within the transistor structure. This technique helps to enhance transistor speed, reduce leakage currents, and optimize the overall efficiency of integrated circuits. By strategically applying halo doping, semiconductor manufacturers can achieve finer control over the electrical characteristics of transistors, leading to improved functionality and performance in electronic devices.