Slow corner is the worst scenario for writing to a bit cell. In the slow corner, the transistors in the bit cell have weaker driving power and slower switching speeds compared to the normal or fast corners. When you try to write data into the bit cell, these slower transistors may struggle to charge or discharge the storage node within the necessary timeframe.
This can lead to timing problems and potential errors in data storage. Due to these speed and reliability issues, we can see why the slow corner is considered the most challenging condition for performing a successful bit cell write operation.
10T SRAM Design for Energy-Efficient SoC Operation
Ultra-low supply voltage is key to saving energy in large digital chips, especially in SRAM, which makes up 20% to 80% of the total transistors in a System-on-Chip (SoC). As supply voltage (VDD) decreases, dynamic and leakage power drops, making voltage scaling an effective strategy. However, lower VDD also leads to increased delays and leakage dominance. Recent research shows the optimal voltage (VOpt) lies between 300 mV and 500 mV. To address instability issues in standard 6T SRAM at low VDD, new 10T SRAM bit cells are proposed. These designs separate read and write paths, enhancing SNM and WM without assist techniques.