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Home»Memory Layout Design»Top Memory Circuit and Layout Design Interview Question
Memory Layout Design

Top Memory Circuit and Layout Design Interview Question

siliconvlsiBy siliconvlsiMay 5, 2023Updated:May 22, 2024No Comments3 Mins Read
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Top Memory Circuit and Layout Design Interview Question

Please add Your Interview questions in the comment box, we will add to this post with Answers and it also will be useful for others, so please add your questions

Advantages of DRAM
Advantages of SRAM
As a Design Engineer, how do you handle Process Variations in VLSI?
Characteristics of DRAM
Characteristics of SRAM
CMOS Interview Questions
CMOS logic, give the various techniques you know to minimize Power Consumption.
Comparison Between SRAM and DRAM
Difference between CPLD and FPGA
Disadvantages of DRAM
Disadvantages of SRAM
Explain the sizing of the inverter in CMOS
Explain the working of 6-T SRAM cell
How does the Resistance of the metal lines vary with increasing thickness and increasing length?
I have two cases: ( Case1: One metal has 2um width and 10um length, case2: Two metals are running partially with 1um width and 10um length for each of two) So from a layout perspective, which case is best and why?
Importance of Clock Distribution Network in VLSI
Memory Bank Architecture
Memory Butterfly Architecture
Metal Semiconductor Contact
Metal Semiconductor ohmic Contact
Metallization Layers in Semiconductor Chips: Aluminum vs. Copper
Nanosheet FET
Optical Proximity Correction (OPC) in VLSI
RC-triggered-based Electrostatic Discharge (ESD) protection
Speed Comparison Between SRAM and DRAM
SRAM Memory Architecture
SRAM vs DRAM
State the De Morgan’s Theorem
Temperature Inversion on Lower Nodes
The Number of Metal Layers in Layout Design
Thermal Issues in DRAM
Thermal Oxidation: Understanding the Formation and Processes
Wet Etching vs. Dry Etching: A Comparative Analysis
What are the different regions of operation in MOS Transistors?
What are the inputs of LVS?
What are the limitations in increasing the power supply to reduce delay?
What are VIAs in VLSI?
What happens to delay if we include a resistance at the output of a CMOS circuit?
What happens to delay if you increase load capacitance?
What is Charge Sharing in CMOS
What is Column Mux in Memory
What is Different about Logic family
What is Diffusion current and Drift current?
What is Dynamic Power?
What is RAM?
What is Silicidation Process?
What is Substrate coupling in VLSI?
What is the Czochralski Process?
What is the importance of Aluminum in Semiconductor Metallization Systems?
What is the worst corner for bit cell Read Operation and why?
What is the worst corner for bit cell Write Operation and why?
Which transistor has higher gain, BJT or MOS and why?
Why are (111)-oriented P-type substrates preferred?
Why do we gradually increase the size of inverters in buffer design
Why do we need Sense amplifiers and Precharge Circuit?
Why do You need Pre-charge in SRAM memory?
Why is a P-type (100) substrate doped with boron preferred?
Why is the substrate in NMOS connected to Ground and in PMOS to VDD?
Why not give the output of a circuit to one large inverter?
Why PMOS and NMOS are sized equally in Transmission Gates?
Why PMOS is used in reading mux?
Why SRAM is faster than DRAM?

 

Memory Circuit Design

 

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