The detailed difference between the two types of semiconductors is provided below:
- Intrinsic semiconductors do not undergo doping or the addition of impurities.
- The number of free electrons in the conduction band is equal to the number of holes in the valence band.
- Electrical conductivity in intrinsic semiconductors is low.
- Electrical conductivity in intrinsic semiconductors depends solely on temperature.
- Examples of intrinsic semiconductors are the crystalline forms of pure Silicon and Germanium.
- Extrinsic semiconductors are prepared by adding a small amount of impurity to a pure semiconductor through a process called doping.
- The number of electrons and holes in extrinsic semiconductors is not equal.
- Electrical conductivity in extrinsic semiconductors is high.
- Electrical conductivity in extrinsic semiconductors depends on both temperature and the amount of impurity doping in the pure semiconductor.
- Examples of extrinsic semiconductors include Germanium or Silicon doped with impurities like Arsenic (As), Aluminium (Al), Phosphorus (P), Gallium (Ga), Indium (In), Antimony (Sb), and others.
In summary, intrinsic semiconductors remain pure without any impurity additions, while extrinsic semiconductors are intentionally doped with specific impurities to modify their electrical properties. Silicon and Germanium are examples of intrinsic semiconductors, whereas extrinsic semiconductors are obtained by adding impurities like Arsenic, Aluminium, Phosphorus, Gallium, Indium, Antimony, and others to pure Germanium or Silicon.
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