Adjust the CMOS inverter to either reduced leakage or decrease delay by following ways,
Reducing Leakage Current
I recommend utilizing a larger PMOS (p-channel metal-oxide-semiconductor) transistor along with a smaller NMOS (n-channel metal-oxide-semiconductor) transistor. This approach helps us minimize the sub-threshold leakage current, as we know that PMOS transistors generally exhibit lower leakage compared to NMOS transistors. You’ll find that this strategy can significantly improve the overall efficiency of your circuit design.
Decreasing Delay
Reduce the sizes of both the PMOS and NMOS transistors to decrease the channel resistance and improve the switching speed. This can be achieved by adjusting the width-to-length ratio of the transistors. Utilize high-performance CMOS processes that offer faster transistor switching speeds and reduced parasitic capacitance.