Adjust the CMOS inverter to either reduced leakage or decrease delay by following ways,
Reducing Leakage Current
Utilize a larger PMOS (p-channel metal-oxide-semiconductor) transistor and a smaller NMOS (n-channel metal-oxide-semiconductor) transistor. This helps minimize the sub-threshold leakage current, as PMOS transistors generally exhibit lower leakage compared to NMOS transistors.
Reduce the sizes of both the PMOS and NMOS transistors to decrease the channel resistance and improve the switching speed. This can be achieved by adjusting the width-to-length ratio of the transistors. Utilize high-performance CMOS processes that offer faster transistor switching speeds and reduced parasitic capacitance.
- Cascaded CMOS Inverters
- Are cascaded CMOS inverters more prone to signal delays?
- Can cascaded CMOS inverters be used in low-power applications?
- Can be cascaded CMOS inverters improve noise immunity in digital circuits?
- Why cascaded CMOS inverters of different ratios are better than a single inverter?
- Why do we gradually increase the size of a CMOS inverter in each cascaded stage?
- What happens when resistance is placed in the place of PMOS in a CMOS inverter circuit?
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