FinFETs provide better control over short-channel effects compared to planar MOSFETs
I think FinFETs give better control because the gate wraps around the channel from multiple sides. In planar MOSFETs, the gate only controls the channel from the top, but in FinFETs, it controls from the top and sides. This reduces leakage and makes the channel less affected by short-channel effects.
From my experience, you can say FinFETs act like a 3D structure. Because of this 3D design, the electric field is controlled more tightly, which helps reduce problems like drain-induced barrier lowering (DIBL). In planar devices, when we scale down, these effects become very strong, but FinFETs manage them much better.
We should also look at it from the performance point of view. FinFETs don’t just control leakage better; they also improve drive current. So, you are not only fixing short-channel issues but also getting faster switching. That’s why many companies moved from planar MOSFETs to FinFETs at smaller nodes like 16nm and below.
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