We extend Poly from the diffusion to avoid the short circuit between the source and drain during fabrication.
During the fabrication process, there are chances that the mask gets a slight misalignment.
We all know that we can’t get the exact design in fabrication. there is a reduction or shrink factor in the VLSI Fabrication process(around 1~2%).
What is the length of diffusion effect in VLSI?
The Length of Diffusion (LOD) refers to the distance from an n-channel or p-channel to the edge of the shallow trench isolation (STI) oxide. Oxide Diffusion (OD) to OD spacing represents the spacing between active areas, known as active-to-active spacing. These factors are part of layout-dependent effects in semiconductor device design.
|Analog and Memory Layout Design Forum
|Physical Layout Desing Forum
|RTL & Verilog Design Forum
|Analog Layout Design Interview Questions
|Memory Design Interview Questions
|Physical Design Interview Questions
|Verilog Interview Questions
|Digital Design Interview Questions
|STA Interview Questions