Here is the difference between a p-type semiconductor and an n-type semiconductor presented in a tabulated form:
| BASIS OF DIFFERENCE | p-TYPE SEMICONDUCTOR | n-TYPE SEMICONDUCTOR |
|---|---|---|
| Group of Doping Element | III group element is added as a doping element. | V group element is added as a doping element. |
| Nature of Doping Element | The impurity added creates a vacancy of electrons (holes) called the Acceptor Atom. | The impurity added provides extra electrons and is known as the Donor Atom. |
| Type of Impurity Added | Trivalent impurities like Al, Ga, In, etc., are added. | Pentavalent impurities like P, As, Sb, Bi, etc., are added. |
| Majority Carriers | Holes are the majority carriers. | Electrons are the majority carriers. |
| Minority Carriers | Electrons are minority carriers. | Holes are minority carriers. |
| The density of Electrons and Holes | The hole density (nh) is much greater than the electron density (ne). | The electron density (ne) is much greater than the hole density (nh). |
| Energy Level | The acceptor energy level is close to the valence band and away from the conduction band. | The donor energy level is close to the conduction band and away from the valence band. |
| Fermi Level | Fermi level lies between the acceptor energy level and the valence band. | The Fermi level lies between the donor energy level and the conduction band. |
| Movement of Majority Carriers | The majority of carriers move from higher to lower potential. | The majority of carriers move from lower to higher potential. |
In p-type semiconductors, trivalent impurities like Al, Ga, In, etc., are added, creating holes as majority carriers. On the other hand, n-type semiconductors are doped with pentavalent impurities like P, As, Sb, Bi, etc., producing extra electrons as majority carriers. The density of holes is much greater in p-type semiconductors, while the density of electrons is much greater in n-type semiconductors. The energy levels of acceptor and donor atoms are close to the valence band and conduction band, respectively, in their respective semiconductors. The Fermi level lies between the acceptor energy level and the valence band in p-type semiconductors, while in n-type semiconductors, it lies between the donor energy level and the conduction band. Moreover, the majority of carriers in p-type semiconductors move from higher to lower potential, whereas in n-type semiconductors, they move from lower to higher potential.