Impact Ionization Generation
Impact ionization is the process in a material by which one energetic charge carrier can lose energy by the creation of other charge carriers. In semiconductors, an electron (or hole) with enough kinetic energy can knock a bound electron out of its bound state (in the valence band) and promote it to a state in the conduction band, creating an electronhole pair.
In MOSFET devices, the peak of generation is commonly observed in the channel near the Drain area. The minority carriers contribute to the drain current, while the majority carriers are attracted and collected by the bulk electrode. A common measure for the occurrence of impact-ionization in MOS devices is, therefore, the bulk current. Impact ionization is an important charge-generation mechanism. It occurs in many semiconductor devices and it either determines the useful characteristic of the device or it causes an unwanted parasitic effect
What is the principle of ionization?
Ionization, also known as ionization, is the process wherein an atom or molecule gains or loses electrons, resulting in the acquisition of a negative or positive charge. This process often occurs concurrently with other chemical changes. The atom or molecule that undergoes ionization and becomes electrically charged is referred to as an ion.