What is Impact ionization?
Impact ionization is the process in a material by which one energetic charge carrier can lose energy by the creation of other charge carriers. In semiconductors, an electron (or hole) with enough kinetic energy can knock a bound electron out of its bound state (in the valence band) and promote it to a state in the conduction band, creating an electronhole pair.
In MOSFET devices, the peak of generation is commonly observed in the channel near the Drain area. The minority carriers contribute to the drain current, while the majority carriers are attracted and collected by the bulk electrode. A common measure for the occurrence of impact-ionization in MOS devices is, therefore, the bulk current. Impact ionization is an important charge-generation mechanism. It occurs in many semiconductor devices and it either determines the useful characteristic of the device or it causes an unwanted parasitic effect
What is the principle of ionization?
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