How does Wordline driver strength impact half-select disturb?

Wordline driver strength has a direct impact on half-select disturb. If the driver is too strong, it can slightly raise the wordline voltage of unselected rows due to coupling or leakage, which can partially turn ON the access transistors of half-selected cells.For example, in one SRAM design, we used a stronger wordline driver to improve access speed, but we started seeing read disturb issues on half-selected cells. After reducing the driver size and adding a small buffer stage, the disturb problem almost disappeared. So, stronger is not always better — it’s about balance.